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Analysis of nanosecond time scale current flow dynamics in semiconductor devices with S-shape current-voltage characteristics

Seminar
Friday, 02.03.2018 14:00

Speakers: D. Pogany
Place: Room 117, Main building Na Slovance
Presented in English
Organisers: Department of Functional Materials
Analysis of nanosecond time scale current flow dynamics in semiconductor devices with S-shape current-voltage characteristics. D. Pogany Institute for Solid State Electronics, TU Wien, Austria
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