Jan Grym, Ph.D.

Research interests:

• Growth and characterization of low-dimensional semiconductor structures
• Electrophoretic deposition of nanoparticles.
• Scanning electron and focused ion beam microscopy; photoluminescence and cathodoluminescence spectroscopy of compound semiconductors.
• Preparation and characterization of porous structures of III-V semiconductors.

Professional activities:

2013: Short-term stays at the Center of Functional Nanomaterials, Brookhaven National Laboratory, USA.
2012 - today: research scientist at the Institute of Photonics and Electronics, ASCR. Synthesis and characterization of nanomaterials.
2009 - today: Committee member of the Czechoslovak Association for Crystal Growth.
2007 - 2011: postdoctoral fellow at the Institute of Photonics and Electronics, ASCR, Semiconductor technologies.
October - December 2004: Visisting scientist, Institute of Semiconductors, Chinese Academy of Sciences, Beijing.
October 2003 - July 2004: Marie Curie Fellowship (5th Framework Programme of EU), ten-month stay, Dept. of Physics of Materials, Faculty of Physics, Universidad Complutense de Madrid, Spain. Research training in characterisation of electronic and optical properties of semiconductors by different microscopy and spectroscopy techniques. Preparation and characterization of ZnO nanostructures.

Education:

Czech Technical University in Prague, Faculty of Electrical Engineering:
2007: Ph.D. in Electrotechnology and Materials
2000: MSc. in Technological Systems
1998: Bc. in Electrical Power Engineering

Current research projects:

Principal investigator of projects:

• Nanostructured heterojunctions for chemiresistors
• Growth mechanisms of solution-grown one-dimensional semiconductor structures on patterned substrates
• Charge transport mechanism in Schottky contacts on one-dimensional ZnO nanostructures

Member of projects:

• Glasses transmitting infrared radiation based on heavy metal oxides
• Electrophoretic deposition through a time-varying electric field for research into new physical properties of nanostructured materials
• Electrophoretic deposition of nanostructured ZnO films and their use in hazardous gas detection

Selected past projects:

Principal investigator of projects:

• III-V semiconductor heterostructures and nanostructures towards innovative electronic and photonic applications
• Role of the interface in the preparation of high quality Schottky barriers on III-V semiconductors
• Lattice mismatch compensation in heteroepitaxy on micro and nanoporous A3B5 semiconductors and deposition of metals and semiconductors into micropores
• InP Epitaxial Layers Prepared from Rare-Earth Treated Melts: Growth, Characterization, and Application in Radiation Detectors

Member of projects:

• The role of transition metals and rare earth elements in the preparation of materials based on InP for radiation detectors
• Metallic nanolayers for semiconductor sensor and detector structures
• Utilization of specific properties of rare earths in preparation of InP based radiation detector structures
• The use of rare earth elements to improve the preparation of InP- and PbI2- based semiconductor materials for detection of ionizing radiation

Publications:

Books:

1. Grym, J. (editor) Semiconductor Technologies. 1. - Vukovar : In-Tech, 2010. 462 s. ISBN 978-953-307-080-3. 1.

Book chapters:

1. Grym, J. - Procházková, O. - Zavadil, J. - Žďánský, K., Role of rare-earth elements in the technology of III-V semiconductors prepared by liquid phase epitaxy. Semiconductor Technologies. 1. Vukovar : InTech, 2010 - (Grym, J.), s. 295-320 ISBN 978-953-307-080-3

Journal papers:

1. Yatskiv, R.; Grym, J.; Brus, V. V.; Cernohorsky, O.; Maryanchuk, P. D.; Bazioti, C.; Dimitrakopulos, G. P.; Komninou, P., Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles. Semicond Sci Tech 2014, 29 (4).
2. Kosyachenko, L. A.; Yatskiv, R.; Yurtsenyuk, N. S.; Maslyanchuk, O. L.; Grym, J., Graphite/CdMnTe Schottky diodes and their electrical characteristics. Semicond Sci Tech 2014, 29 (1).
3. Yatskiv, R.; Grym, J., Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes. Semicond Sci Tech 2013, 28 (5).
4. Grym, J.; Yatskiv, R., Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers. Semicond Sci Tech 2013, 28 (4).
5. Grym, J.; Nohavica, D.; Gladkov, P.; Hulicius, E.; Pangrac, J.; Piksova, K., Epitaxial growth on porous GaAs substrates. Comptes Rendus Chimie 2013, 16 (1), 59-64.
6. Yatskiv, R.; Grym, J.; Zdansky, K.; Piksova, K., Semimetal graphite/ZnO Schottky diodes and their use for hydrogen sensing. Carbon 2012, 50 (10), 3928-3933.
7. Yatskiv, R.; Grym, J., Temperature-dependent properties of semimetal graphite-ZnO Schottky diodes. Appl Phys Lett 2012, 101 (16).
8. Yatskiv, R.; Grym, J., Particle detectors based on InP Schottky diodes. J Instrum 2012, 7.
9. Nohavica, D.; Grym, J.; Gladkov, P.; Hulicius, E.; Pangrac, J.; Jarchovsky, Z., Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs. International Journal of Nanotechnology 2012, 9 (8-9), 732-745.
10. Grym, J.; Nohavica, D.; Vanis, J.; Piksova, K.; Lourdudoss, S.; Marcinkevicius, S.; Kataria, H., Preparation of nanoporous GaAs substrates for epitaxial growth. Phys Status Solidi C 2012, 9 (7), 1531-1533.
11. Yatskiv, R.; Grym, J.; Zdansky, K., Particle detectors based on semiconducting InP epitaxial layers. J Instrum 2011, 6.
12. Nohavica, D.; Gladkov, P.; Grym, J.; Jarchovsky, Z., Laser assisted electrochemical preparation of micro and nanopores in Ga (x) In1-x P. Journal of Nanoparticle Research 2011, 13 (11), 5873-5877.
13. Grym, J.; Prochazkova, O.; Yatskiv, R.; Piksova, K., Hydrogen sensors based on electrophoretically deposited Pd nanoparticles onto InP. Nanoscale Res Lett 2011, 6.
14. Yatskiv, R.; Grym, J.; Zdansky, K.; Pekarek, L., Room temperature particle detectors based on indium phosphide. Nucl Instrum Meth A 2010, 612 (2), 334-337.
15. Prochazkova, O.; Grym, J.; Zavadil, J.; Zdansky, K.; Yatskiv, R.; Krotkus, A.; Valusis, G.; Adomavicius, R., Impact of Pr on the properties of InP based layers for light sources and detectors. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 6, No 12 2009, 6 (12), 2801-2803.
16. Grym, J.; Prochazkova, O.; Zavadil, J.; Zdansky, K., LPE growth of InP layers from rare-earth treated melts for radiation detector structures. Materials Science and Engineering B-Advanced Functional Solid-State Materials 2009, 165 (1-2), 94-97.
17. Prochazkova, O.; Grym, J.; Zavadil, J.; Lorincik, J.; Zdansky, K., Influence of Yb AND Yb(2)O(3) addition on the properties of InP layers. J Optoelectron Adv M 2008, 10 (12), 3261-3264.
18. Prochazkova, O.; Grym, J.; Pekarek, L.; Zavadil, J.; Zdansky, K., InP based semiconductor structures for radiation detection. Journal of Materials Science-Materials in Electronics 2008, 19 (8-9), 770-775.
19. Prochazkova, O.; Grym, J.; Zavadil, J.; Zdansky, K., Preparation of p-type InP layers for detection of radiation. J Cryst Growth 2005, 275 (1-2), E959-E963.
20. Grym, J.; Fernandez, P.; Piqueras, J., Growth and spatially resolved luminescence of low dimensional structures in sintered ZnO. Nanotechnology 2005, 16 (6), 931-935.
21. Prochazkova, O.; Zavadil, J.; Zdansky, K.; Grym, J., Preparation of InP-based semiconductor materials with low density of defects: effect of Nd, Ho and Tb addition. Materials Science and Engineering B-Solid State Materials For Advanced Technology 2002, 91, 407-411.