Nanoelectric oxidic semiconductor for optoelectronic application.
Year from
2005
Year to
2008
Aim:
Structural, electrochemical and photoelectrochemical research of n-semiconductor electrode modified by chemisorption of transient metall complexex .
Structural, electrochemical and photoelectrochemical research of n-semiconductor electrode modified by chemisorption of transient metall complexex .
prof. RNDr. KAVAN Ladislav CSc., DSc.
Room
516
Department
Extension
3975
E-mail
ladislav.kavan
jh-inst.cas.cz
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