Nanoelectric oxidic semiconductor for optoelectronic application.

Year from
2005
Year to
2008
Aim:
Structural, electrochemical and photoelectrochemical research of n-semiconductor electrode modified by chemisorption of transient metall complexex .

prof. RNDr. KAVAN Ladislav CSc., DSc.

Room
516
Extension
3975
E-mail
ladislav.kavanatjh-inst.cas.cz