Research Group "Partial Differential Equations"

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and "Weierstrass Group"

Semiconductor Seminar


The Semiconductor Seminar is a joint research seminar of the research group Partial Differential Equations and the Weierstrass Group, where current research and results from the areas electronics, optics, and mechanics of semiconductors is presented and discussed. We are interested in aspects of modeling, simulation and numerical analysis, and mathematical analysis of different relevant modeling systems on different scales.

  • Organizer: Prof. Dr. A. Mielke
  • Place / Time: WIAS, Karl Weierstrass lecture room (4th floor), Friday, 2 p.m.
  • Contact: Dr. Nella Rotundo Dr. Dirk Peschka
    • Please note that seminar is now on Friday at 2 p.m.

    Fr, 29.06. 2018

    Morten Willatzen (Beijing Institute of Nanoenergy and Nanosystems und Danmarks Tekniske Universitet (DTU) Fotonik)
    Strain and symmetry effects in Bi_2Se_3 thin films using the k.p method.
    (2pm-2.30pm)


    Miguel A. Caro (Aalto University, Finnland)
    Growth of amorphous carbon simulated with a machine-learning based interatomic potential.
    (2.30pm-3pm)

    Note: Both talks are in the ESH.

    Mo, 07.05. 2018

    A. Glitzky (WIAS Berlin)
    Thermodynamically consistent models for coupling reaction-diffusion effects in bulk and interfaces

    Note: This talk is on Monday, 1.15 p.m., in the usual room 406.

    Fr, 24.11. 2017

    O. Marquardt (WIAS Berlin)
    Anwendungen der k⋅p-Theorie

    Mi, 15.11. 2017

    A. Boitsev (St. Petersburg National Research University of Information Technologies)
    Boundary triplets, tensor products and point contacts to reservoirs (15 Uhr!)

    Abstract: We consider symmetric operators of the form S:=A⊗I_{\gotT} +I_{\gotH} ⊗T where A is symmetric and T = T* is (in general) unbounded. Such operators naturally arise in problems of simulating point contacts to reservoirs. We construct a boundary triplet Π_S for S* preserving the tensor structure. The corresponding γ-field and Weyl function are expressed by means of the γ-field and Weyl function corresponding to the boundary triplet Π_A for A* and the spectral measure of T. Applications to 1-D Schrödinger and Dirac operators are given. A model of electron transport through a quantum dot assisted by cavity photons is proposed. In this model the boundary operator is chosen to be the well-known Jaynes-Cumming operator which is regarded as the Hamiltonian of the quantum dot.

    Fr, 10.11. 2017

    T. Koprucki (WIAS Berlin)
    Einführung in die k⋅p-Theorie

    Fr, 3.11. 2017

    M. Landstorfer (WIAS Berlin)
    Modellierung von Elektrolyt-Metall Grenzflächen

    17.05. 2017

    S. Reichelt (WIAS Berlin)
    Pulses in FitzHugh-Nagumo systems with periodic coefficients

    03.05. & 10.05. 2017

    J. Rehberg (WIAS Berlin)
    Van Roosbroeck's system is well-posed in case of general recombination terms
    Part I: Functional analytic preliminaries (03.05.2017)
    Part II : The analysis of the system (10.05.2017)

    02.03.2017

    H. D. Doan (WIAS Berlin)
    A unified Scharfetter Gummel scheme

    16.02.2017

    A. Glitzky (WIAS Berlin)
    Analysis for a $p(x)$-Laplace thermistor model describing electrothermal effects in organic semiconductor devices

    02.02.2017

    Dr. I. Y. Popov (ITMO University, St. Petersburg, Russia)
    Tunneling through periodic arrays of quantum dots and spectral problems

    Abstract: Periodic arrays of quantum dots in a constant magnetic field are considered. Two semi-infinite leads are attached to the system. We deal with tunneling through the system. Square and honeycomb lattices, single and double layers were investigated. Zero transmission for some values of the magnetic field is discussed.

    26.01.2017

    Arbi Moses Badlyan (Institut für Mathematik, TU Berlin)
    On the Port-Hamiltonian Structure of the Navier-Stokes Equations for Reactive Flows

    19.01.2017

    M. Kantner (WIAS Berlin)
    Modeling of single-photon sources on a device level

    15.12.2016

    M. Liero (WIAS Berlin)
    Electro-thermal effects in organic semiconductors

    08.12.2016

    D. Peschka (WIAS Berlin)
    Gradient structure for optoelectronic models of semiconductors

    01.12.2016 Attention: the talk will be in ESH Lecture room

    A. Mielke (WIAS Berlin)
    Coupling of quantum and macroscopic systems (second part)

    24.11.2016

    A. Mielke (WIAS Berlin)
    Coupling of quantum and macroscopic systems


    16.11.2016

    S. Kayser (PhD student at IKZ Berlin)
    Lateral-Photovoltage-Scanning (LPS) - und Scanning-Photolumineszenz (SPL) - Methode


    Abstract: Widerstandsschwankungen in Si ,Ge oder Si_xGe_{1-x}-Wafern sind maßgebend für die Qualität des Wafers und definieren seine Züchtungsparameter. Eine Untersuchung der Schwankungen in der Dotierstoffkonzentration in Halbleitern ist mit der LPS-Methode zu erreichen. Die Simulationen zu der dargestellten Messmethode werden mit COMSOL Multiphysics durchgeführt. Hierbei werden Finite-Volumen-Simulationen mit konstanten Ansatzfunktionen mithilfe Semiconductor-Modul kalkuliert. Als Dotierstoffschwankungen entlang der Probe wird ein Sinus vorgegeben. Die Generation von Elektron-Lochpaaren wird durch einen Laser mit konstanter Geschwindigkeit in der Halbleiterprobe verursacht. Die zeitabhängige Lösung dieses Problems wird mithilfe der van Roosbroeck Gleichung in den Variablen, Elektronen-, Lochdichte und elektrisches Potential, erreicht. Ziel der Simulationen ist zu untersuchen, ob eine lokale Bestimmung der Minoritätsladungsträgerlebensdauer mithilfe der Phasenverschiebung zwischen Anregung und resultierender Spannung an den Probenenden möglich ist. Ebenfalls sollen Zusammenhänge mit der SPL-Methode, welche die lokale Lumineszenz aus den Rekombinationen der Elektronen-Loch-Paare bestimmt, analysiert werden.