Rychlé tenkovrstvé scintilátory pro 2D-zobrazování s vysokým rozlišením

The proposed research is focused on the preparation of doped multicomponent garnet and nitride nanostructure materials in the form of single crystalline films prepared by LPE and MOVPE technologies, respectively. In LPE commercial YAG and ?home-made? Gd3Ga3Al2O12 substrates will be used while commercial sapphire ones will mostly be used for MOVPE-made nitride nanostructures. LPE technology based on the modified BaO flux will be employed for the film preparation. The luminescence and scintillation characteristics will be studied with the special attention on the positioning of excited states of the luminescence centres in the forbidden gap of the host. Furthermore, the nature and role of structural defects involved in the energy transfer and storage processes will be examined as well. Materials from both groups will be mutually quantitatively compared as for their potential in fast 2D-imaging applications.