Jan Grym, Ph.D.

Research interests:

• Electronics and optoelectronics
• Preparation and characterization of semiconductor nanomaterials and nanostructures

Professional activities:

2019 - present: Vice-chairman of the evaluation panel Condensed Matter and Materials Physics of the Czech Science Foundation

2019 - present: Member of the Doctoral Board Physics of Surfaces and Interfaces, Faculty of Mathematics and Physics of Charles University in Prague

2019: Scientific committee member: European Materials Research Society (E-MRS) Meeting

2017 - 2019: Member of the evaluation panel Condensed Matter and Materials Physics of the Czech Science Foundation

2017 - present: Member of the Doctoral Board Electrotechnology and Materials, Faculty of Electrical Engineering of the Czech Technical University in Prague

2016 - present: Member of the Doctoral Board Physics of Condensed Matter and Materials Research, Faculty of Mathematics and Physics of Charles University in Prague

2014 - present: Scientific committee member: International Conference on Electrophoretic Deposition

2010 - present: Scientific Committee member of the Development of Materials Science in Research and Education conference

2009 - 2015: Committee member of the Czechoslovak Association for Crystal Growth

International research experience:

2012 - 2015: Visiting scientist at the Center of Functional Nanomaterials, Brookhaven National Laboratory, USA, four short-term stays. Nanomaterials for energy.

2005: Visiting scientist, two-month stay, Institute of Semiconductors, Chinese Academy of Sciences, Beijing. Technology of wide bandgap semiconductors.

2003 - 2004: Marie Curie Fellowship, Dept. of Physics of Materials, Faculty of Physics, Universidad Complutense de Madrid, Spain. Research training in characterization of electronic and optical properties of semiconductors by microscopy and spectroscopy techniques.

Education:

Czech Technical University in Prague, Faculty of Electrical Engineering:
2007: Ph.D. in Electrotechnology and Materials
2000: MSc. in Technological Systems

Current research projects:

Principal investigator of projects:

• Nanostructured heterojunctions for chemiresistors

Selected past projects:

Principal investigator of projects:

• Growth mechanisms of solution-grown one-dimensional semiconductor structures on patterned substrates
• Charge transport mechanism in Schottky contacts on one-dimensional ZnO nanostructures
• III-V semiconductor heterostructures and nanostructures towards innovative electronic and photonic applications
• Role of the interface in the preparation of high quality Schottky barriers on III-V semiconductors
• Lattice mismatch compensation in heteroepitaxy on micro and nanoporous A3B5 semiconductors and deposition of metals and semiconductors into micropores
• InP Epitaxial Layers Prepared from Rare-Earth Treated Melts: Growth, Characterization, and Application in Radiation Detectors

Publications:

Books:

1. Grym, J. (editor) Semiconductor Technologies. 1. - Vukovar : In-Tech, 2010. 462 s. ISBN 978-953-307-080-3. 1.

Book chapters:

1. Grym, J. - Procházková, O. - Zavadil, J. - Žďánský, K., Role of rare-earth elements in the technology of III-V semiconductors prepared by liquid phase epitaxy. Semiconductor Technologies. 1. Vukovar : InTech, 2010 - (Grym, J.), s. 295-320 ISBN 978-953-307-080-3

Journal papers:

1. S. Tiagulskyi, R. Yatskiv, H. Faitová, Š. Kučerová, J. Vaniš and J. Grym, Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate. Materials Science in Semiconductor Processing, 107: p. 104808. 2020.
2. S. Tiagulskyi, R. Yatskiv, H. Faitová, Š. Kučerová, D. Roesel, J. Vaniš, J. Grym and J. Veselý, Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates. Nanomaterials (Basel), 10(3): p. 508. 2020.
3. O. Černohorský, J. Grym, H. Faitová, N. Bašinová, Š. Kučerová, R. Yatskiv and J. Veselý, Modeling of Solution Growth of ZnO Hexagonal Nanorod Arrays in Batch Reactors. Crystal Growth & Design, 20: p.3347-3357. 2020.
4. R. Yatskiv, S. Tiagulskyi and J. Grym, Characterization of Graphite/ZnO Schottky Barriers Formed on Polar and Nonpolar ZnO Surfaces. Physica Status Solidi A-Applications and Materials Science, 216(2). 2019.
5. O. Černohorský, J. Grym, R. Yatskiv, V.H. Pham and J.H. Dickerson, Insight into Nanoparticle Charging Mechanism in Nonpolar Solvents To Control the Formation of Pt Nanoparticle Monolayers by Electrophoretic Deposition. ACS Applied Materials & Interfaces, 8(30): p. 19680-19690. 2016.
6. R. Yatskiv, V.V. Brus, M. Verde, J. Grym and P. Gladkov, Electrical and optical properties of graphite/ZnO nanorods heterojunctions. Carbon, 77: p. 1011-1019. 2014.
7. G.P. Dimitrakopulos, C. Bazioti, J. Grym, P. Gladkov, E. Hulicius, J. Pangrác, O. Pacherová and P. Komninou, Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates. Applied Surface Science, 306: p. 89-93. 2014.
8. J. Grym and R. Yatskiv, Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers. Semiconductor Science and Technology, 28(4): p. 045006. 2013.
9. R. Yatskiv, J. Grym, K. Zdansky and K. Piksova, Semimetal graphite/ZnO Schottky diodes and their use for hydrogen sensing. Carbon, 50(10): p. 3928-3933. 2012.
10. R. Yatskiv and J. Grym, Temperature-dependent properties of semimetal graphite-ZnO Schottky diodes. Applied Physics Letters, 101(16): p. 162106. 2012.
11. J. Grym, P. Fernandez, J. Piqueras, Growth and spatially resolved luminescence of low dimensional structures in sintered ZnO. Nanotechnology, 16(6): p. 931-935. 2005.

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