Publikace
Ve výpisu publikací najdete všechny důležité publikační výsledky výzkumu a vývoje našich vědeckých pracovníků od roku 1961.
- Ce3+ luminescence in a LiBaF3 single crystal at low temperaturePhysical Review B 66 (2002) 184101-184102.
- LiCoO2 thin-film cathodes grown by RF sputteringJournal of Power Sources. Roč. 108, - (2002), s. 204-212. ISSN 0378-7753
- Influence of Y-codoping on the PbWO4:Mo luminescence and scintillator characteristicsNuclear Instruments and Methods in Physics Research A 486, 453-457 (2002).
- Optical absorption and thermoluminescence of Tb3+-doped phosphate scintillating glassesJournal of Physics: Condensed Matter 14 (2002) 7417-7426.
- Temperature dependence of anomalous decay: theory and experiment.Physical Review B 66 (2002) 155102(1)-155102(7).
- Quantum corrections to the semiclassical temperature scale in the structured emission of tetrahedral complexesPhys. Rev. B 66, 132301 (1-4) (2002).
- Fourier-Transform Photocurrent Spectroscopy of Defects in CVD Diamond LayersPhys. Stat. Sol. (a) 193, 502-507 (2002)
- Electron spin resonance of Ti3+ in KTa0.9Nb0.1O3Solid State Communications 122 (2002) 277-281
- Ce3+ luminescence in a LiBaF3 single crystal at low temperatures.Phys. Rev. B 66, 184101 (1-5) (2002)
- Electron paramagnetic resonance of Er3+, Nd3+ and Ce3+ ions in YAlO3 singlecrystals.Sol. State Phys. (in russian) 44 (2002) 830-835
- Defect creation under UV irradiation of CsI : Pb crystals in Pb2+ - Induced absorption bands investigated by luminescence methodsphysica status solidi (b) 234 (2002) 689-700.
- Induced Absorption Phenomena Thermoluminescence and Colour Centres in KMgF3, BaLiF3 and LiCaAlF6 Complex FluoridesJpn. J. Appl. Phys. 41 (2002) 2028-2033
- Theoretical study of the structured blue emission of PbWO4Radiation Effects & Defects in Solids, 2002, Vol. 157, pp. 927-930
- Enhanced efficiency of doubly doped PbWO4 scintillatorRadiation Effects & Defects in Solids, 2002, Vol. 157, pp. 937-941
- Photoinduced oxygen-vacancy related centers in PbWO4: Electron spin resonance and thermally stimulated luminescence study.Radiation Effects & Defects in Solids, 2002, Vol. 157, pp. 1025-1031
- Radiation induced colour centers and damage in YAlO3: Ce and YAlO3: Ce, Zr ScintillatorsRadiation Effects & Defects in Solids, 2002, Vol. 157, pp. 677-681
- Shallow Traps in Pure KTaO3 crystalsRadiation Effects & Defects in Solids, 2002, Vol. 157, pp. 721-727
- Defect states in Lu3Al5O12:Ce crystalsRadiation Effects & Defects in Solids, 2002, Vol. 157, pp. 1003-1007
- Growth and properties of Ce3+-doped Lux (RE3+)1-xAP scintillatorsOptical Materials 19 (2002) 117-122
- On the Interpretation of Luminescence of Lead Halide CrystalsPhys. Stat. Sol. (b) 229, No. 3, 1295-1304 (2002)
- The photoinduced Ti3+ centre in SrTiO3Journal of Physics Condensed Matter 14 (2002) 13813-13825
- Complete spectrum of long wavelength phonon modes in Sn.2.P.2.S.6. by Raman scatteringPhysical Review B 65 (2002) 064308(1)-064308(9).
- Directional dispersion of polar optical phonon frequencies in low-symmetry crystals: Raman studies in Sn.2.P.2.S.6.Ferroelectrics 267 (2002) 237-243.
- Phason dispersion in deuterated thiourea by inelastic neutron scatteringPhysical Review B 66 (2002) 132302(1)-132302( ).
- Journal of Chemical Physics 117 (2002) 8454-8466.
- Ultrafast carrier dynamics in CdSe nanocrystalline films on crystalline silicon substrate.Thin Solid Films 403-404 (2002) 462 - 466
- Infrared picosecond absorption spectroscopy of microcrystalline silicon: separation between carrier recombination in crystalline and amorphous fractions.Appl. Phys. A-Mater. 74 (2002) 253 - 256
- Surface Photovoltage measurements in uc-Si:H: Manifestation of the bottom space charge region.J. Appl. Phys. 92 (2002) 2323 - 2329
- Electric-field-enhanced metal-induced crystallization of hydrogenated amorphous silicon at room temperature.Appl. Phys. A-Mater. 74 (2002) 557 - 560
- Irreversible thermodynamics and true thermal state dynamics in view of generalised solid-state reaction kinetics.Thermochimica Acta 388 (2002) 427-439.
- Photoluminescence properties of sol-gel derived SiO2 layers doped with porous silicon.Mat. Sci. Eng. C-Bio S. 19/1-2 (2002) 233 - 236
- Waveguiding effects in the measurement of optical gain in a layer of Si nanocrystal.Appl. Phys. Lett. 81 (2002) 1396 - 1398
- Initial stages of adsorption in the Cu/Si(111) system.Surf. Sci. 506 (2002) 223 - 227
- Initial stages of Cu/Si interface formation.Surf. Sci. 507-510 (2002) 889 - 894
- Microcrystalline silicon thin films studied by atomic force microscopy with electrical current detection.J. Appl. Phys. 92 (2002) 587 - 593
- Model of transport in microcrystalline silicon.J. Non-Cryst. Solids 299-302 (2002) 355 - 359
- Influence of combined AFM/current measurement on local electronic properties of silicon thin films.J. Non-Cryst. Solids 299-302 (2002) 360 - 363
- Grains in protocrystalline silicon grown at very low substrate temperatures.J. Non-Cryst. Solids 299-302 (2002) 767 - 770
- Philosophical Magazine B (2002) 1785-1793.
- International Summer School Role of Physics in Future Applications: From Nanotechnology to Macroelectronics.Thin Silicon Newsletter, publ. by aSiNet thematic network newsletter within EC growth programme, editor: J. Andreu, No.3 (2002), 1 ISSN 1579-4555 ., 2002, pp. 1 ISSN 1579-4555
- Importance of the transport isotropy in uc-Si:H thin films for solar cells deposited at low substrate temperatures.J. Non-Cryst. Solids 299-302 (2002) 395 - 399
- Determination of sensoric parameters of porous silicon in sensing of organic vapors.Mat. Sci. Eng. C-Bio S. 19 (2002) 251 - 254
- Stimulated emission in blue-emitting Si+-implanted SiO2 films?J. Appl. Phys. 91 (2002) 2896 - 2900
- Features of chrge carrier transport in mc-Si:H/a-Si:H superlatticesMater. Sci. Forum 384-385 (2002) 301 - 304
- Applied Physics A-Materials Science & Processing 74 (2002) S673-S676.
- Pulsed laser deposition of CNx films: role of r.f. nitrogen plasma activation for the film structure formationDiamond and Related Materials 11 (2002) 1223-1226.
- Applied Physics A-Materials Science & Processing A74 (2002) 481-485.
- Physical Review B 66 (2002) 224303(1) -224303(12).
- Physical Review B 66 (2002) 235406(1) -235406(12).
- Surface Science 507-510 (2002) 108-113.