E-Beam Lithography Technology

The group of Electron Beam Lithography (EBL) within the Special technology department developed the E-beam lithography technology and Optical diffractive structures.

Dimension calibration samples.

Target 1951 USAF.

Photomask for dynamic measurements of gravity. Source.

A required image is enregistered into the thin polymer layer (positive or negative electron resist) by the beam of electrons. The resist-layer mask is created by the development of the exposed patterns. The substrate surface (or the working layer previously deposited on the substrate – either a metallic or a dielectric one) is modified through the resist openings.

EBL originated samples and applications:

• Dimension standard structure.
• Masters for nano imprint lithography (NIL).
• Glass masks for optical and UV lithography.
• Direct write lithography.
• Micro and nano relief characterization by atomic force microscopy (AFM).

Selected R&D result used by industrial partners:

• A few samples of metrology dimension standards for both optical and e beam microscopy were delivered to several customers. The precision of the samples is derived from the laser-interferometer calibrated exposure field of the e beam pattern generator. The samples are basically composed of the scale, rectangular gratings with different periods and a set of geometrical shapes with a description.

The group of Electron Beam Lithography

Research areas:

• EBL for Nanotechnologies
• Microlithography Techniques
• Nanolitography
• Industrial holography using e-beam lithography

Offered technologies:

• Optical diffractive structures
• E-beam lithography technology