Publikace
Ve výpisu publikací najdete všechny důležité publikační výsledky výzkumu a vývoje našich vědeckých pracovníků od roku 1961.
- Defects and impurities in SrTiO3 films: evidence from ESRFerroelectrics 239 (2000) 349-356.
- Journal of Crystal Growth 209 (2000) 198-202.
- Optical properties of Si+-ion implanted sol-gel derived SiO2 films.Mat. Science and Engineering B69-70, 564-569 (2000).
- Paramagnetic dipole centers in KTaO3: Electron-spin-resonance and dielectric spectroscopy study.Physical Review B61 (2000) 3897-3904.
- Temperature behaviour of optical properties of Si+-implanted SiO2.Eur. Phys. J. D 8, (2000), p. 395-398.
- Optical and structural properties of ternary nanoaggregates in CsI-PbI2 co-evaporated thin films.Journal of Physics: Condensed Matter 12 (2000) 1939-1946.
- Tunneling process in thermally stimulated luminescence of mixed LuxY1-xAlO3Ce crystals.Physsical Review B, Vol. 61, Number 12. (2000), p. 8081-8086.
- Development of new mixed Lux(RE3+)1-xAP:Ce scintillators (RE3+ = Y3+ or GD3+): comparison with other Ce-doped or intrinsic scintillating crystals.Nuclear Instruments and Methods in Physics Research A 443 (2000), p. 331-341.
- Comment on "Propagator of the Fokker-Planck equation with a linear force--Lie- algebraic approach" by C. F. Lo.Europhysics Letters 50(2) (2000) 278-279.
- Effect of La Doping on Calcium Tungstate (CaWO4) Crystals Radiation Hardnes.phys. stat. sol. (a) 178, p. 799-804 (2000).
- Auger recombination as a probe of the Mott transition in semiconductor nanocrystals.Applied Physics Letters 76 (2000) 2850-2852.
- Luminescence of Cs4PbBr6 Aggregates in As-Grown and in Annealed CsBr:Pb Single Crystals.phys. stat. sol. (b) 219, p. 205-214 (2000).
- Growth of Lead Tungstate Single Crystals from Gel and Their Luminescence.physica status solidi (a) 179 (2000) 262-264.
- Influence of doping on the emission and scintillation characteristics of PbWO4 single crystals.Journal of Applied Physics, Volume 87, Number 9, p. 4243-4248 (2000).
- Excitonic emission of scheelite tungstates AWO4 (A = Pb, Ca, Ba, Sr).Journal of Luminescence 87-89, p. 1136-1139 (2000).
- Journal of Applied Physics 88 (2000) 148-160.
- Ce3+ or Tb3+-doped phosphate and silicate scintillating glasses.Journal of Luminescence 87-89 (2000) 673-675.
- Luminescence of ternary nanoaggregates in CsI-PbI2 thin films.Journal of Luminescence 87-89 (2000) 372-374.
- Influence of Gd3+ Concentration on PbWO4:Gd3+ Scintillation Characteristics.phys. stat. sol. (a) 179, p. 445-454 (2000).
- Journal of Non-Crystalline Solids 266-269 (2000) 519-523.
- Traps and Timing Characteristics of LuAG:Ce3+ Scintillator.phys. stat. sol. (a) 181, p. R10-R12, (2000).
- Efficient radioluminescence of the Ce3+-doped Na-Gd phosphate glasses.Applied Physics Letters 77 (2000) 2159-2161.
- Visible photoluminescence and electroluminescence in wide-bandgap hydrogenated amorphous silicon.Philosophical Magazine B, 2000, Vol. 80, No. 10, p. 1811-1832, (2000).
- physica status solidi (a) 181 (2000) 115-119.
- physica status solidi (a) 181 (2000) 77-81.
- Photoinduced (WO4)3--La3+ center in PbWO4: Electron spin resonance and thermally stimulated luminescence study.Physical Review B, Vol. 62, Number 15, p. 10109-10114 (2000).
- The growth, structure and optics of CsI-PbI2 co-evaporated thin films.Thin Solid Films 373 (2000) 195-198.
- Pd+ ions in NaCl single crystal: EPR and optical studiesRadiation Effects & Defects in Solids 158 (2000) 191-195.
- The role ofthe oxygen molecules in the photolysis of fullerenesFuller. Sci. Technol. 8 (2000) 289
- Time Evolution of Photolumenscence Response from Porous Silicon in Hydrocarbon Gas Sensing.phys. status solidi a 182 (2000) 485 - 488
- Optical properties of Si+ ion implanted sol-gel derived SiO2 films.Mat. Sci. Eng. B 69-70 (2000) 564 - 569
- Ultrafast Carrier Dynamics in Undoped Microcrystalline Silicon.Mat. Sci. Eng. B 69-70 (2000) 238 - 242
- Study of Pb Diffusion on Si(111)-(7x7) with AScanning Tunneling Microscope: Low Coverage.J. Vac. Sci. Technol. B 18 (2000) 1151 - 1155
- Wide Gap Hydrogenated Amorphous Silicon for Visible Light Emission.J. Porous Mat. 7 (2000) 135 - 138
- Temperature behaviour of optical properties of Si+-implanted SiO2.Eur. Phys. J. D 8 (2000) 395 - 398
- Extraction Current Transients: New Method of Study of Charge Transport in Microcrystalline Silicon.Phys. Rev. Lett. 84 (2000) 4946
- Temperature study of phase coexistence in the system Pb on an Si(111) surface.Surf. Sci. 454-456 (2000) 584 - 590
- Visible photoluminescence and electroluminescence in wide-band gap hydrogenated amorphous silicon.Philos. Mag. B 80 (2000) 1811 - 1832
- Investigation of Si Nanocrystals embedded into porous SiO2 matrix.Lithuanian J. Phys. 40 (2000) 160 - 163
- Red electroluminescence in Si+ implanted sol-gel-derived SiO2 films.Appl. Phys. Lett. 77 (2000) 2952 - 2954
- Surface and bulk light scattering in microcrystalline silicon for solar cells.J. Non-Cryst. Solids 271 (2000) 152 - 156
- Local electronic transport in microcrystalline silicon observed by combined atomic force microscopy.J. Non-Cryst. Solids 266-269 (2000) 309 - 314
- New method of drift mobility evaluation in uc-Si:H, basic idea and comparison with time-of-flight.J. Non-Cryst. Solids 266-269 (2000) 331 - 335
- Light emitting wide band gap a-Si:H deposited by microwave electron cyclotron resonance plasma-enhanced chemical vapour deposition.J. Non-Cryst. Solids 266-269 (2000) 583 - 587
- Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas.J. Non-Cryst. Solids 266-269 (2000) 341 - 346
- Physical Review Letters 85 (2000) 3257-3260.
- Physical Review B 62 (2000) 10908-10913.
- Physical Review B 61 (2000) 2749-2754.
- Physical Review Letters 85 (2000) 2609-2612.
- Physical Review B 62 (2000) 13579-13587.