Antonín Fejfar

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Group subject:

Probing local optoelectronic properties with nanometer resolution


Name and Curriculum vitae of contact person:

Antonín Fejfar, (RNDr., CSc.)

Affiliation:

Dept. of Thin Films, Institute of Physics, Academy of Sciences of the Czech Republic

Fields of scientific activity:

Research of non-crystalline semiconductors for thin-film solar cells, with special emphasis on:

• Study of local optoelectronic properties with nanometer resolution by a tip of the scanning probe microscopy.

• Modeling of the growth and structure of mixed-phase nanocrystalline silicon films

• The supervisor of 5 diploma theses and 8 PhD theses.

Publications:

Author or co-author 58 papers in international in international journals, 1 invited contributions to a monography and 26 conference contributions. Delivered 8 invited talks at international conferences. Total number of foreign references reached 185.

Selected study stays abroad:

1991-93 postdoctoral stay at in the Ion-Beam Engineering Experimental Laboratory, Kyoto University with Prof. I. Yamada

Selected projects:

• 2002-2004 European thematic network on Amorphous Silicon Device Technology aSiNet, EC project funded under the ‘Competitive and Sustainable Growth’ programme, 5th FP (G5RT-CT-2001-05012)

• 2002-2004 MŠMT Kontakt ME 537 Materiály pro tenkovrstvé sluneční články nanášené při nízkých teplotách na plastové podložky

• 2003-2005 MŽP VaV/300/01/03 Vývoj a výzkum nízkonákladové technologie fotovoltaických článků

Selected publications from last 5 years:

• B. Rezek, J. Stuchlík, A. Fejfar, J. Kočka: Local characterization of electronic transport in microcrystalline silicon thin films with submicron resolution, Appl. Phys. Lett. 74, 1475 - 1477 (1999)

• A. Fejfar, T. Mates, P. Fojtík, M. Ledinský, K. Luterová, H. Stuchlíková, I. Pelant, J. Kočka, V. Baumruk, A. Macková, M. Ito, K. Ro, H. Uyama: Structure and properties of silicon thin films deposited at low substrate temperatures, Jpn. J. Appl. Phys. Vol.42 No. 8B, pp. L987 L989 (2003)

• V. Švrček, I. Pelant, J. Kočka, P. Fojtík, B. Rezek, H. Stuchlíková, A. Fejfar, J.Stuchlík, Poruba and J.Toušek: Transport Anisotropy in Microcrystalline Silicon Studied by Measurement of Ambipolar Diffusion Length, J. Appl. Phys. 89, 1800-1805 (2001)

• A. Fejfar, T. Mates, Ch. Koch, B. Rezek, V. Švrček, P. Fojtík, H. Stuchlíková, J. Stuchlík, J. Kočka: Microscopic Aspects Of Charge Transport In Hydrogenated Microcrystalline Silicon, Mat. Res. Soc. Symp. Proc., Vol. 664, Amorphous and Heterogeneous Silicon-Based Films, James B. Joyce, J. David Cohen, Robert W. Collins, Jun-ichi Hanna, Martin Stutzman (editors), publ. by Materials Research Society, Warrendale 2001, p. A16.1.1.

• A. Fejfar, T. Mates, O. Čertík, B. Rezek, J. Stuchlík, I. Pelant, J. Kočka: Model of electronic transport in microcrystalline silicon and its use for prediciton of device performance, invited talk at ICAMS 20, Campos do Jordao, Brazil 2003, to be published in J. Non-crystal. Solids

Group members:

Antonín Fejfar, Tomáš Mates, Petr Fojtík, Bohuslav Rezek, Shinya Honda, I. Drbohlav, K. Kůsová

Main Research Subjects:

• atomic force microscopy combined with measurements of local conductivity

• Kelvin probe measurements using AFM cantilever

• scanning tunneling luminescence

• use of the SPM probe as a tool for preparation of nanostructures

• predictive model of growth, structure and electronic properties of micro- and nano-crystalline silicon films for solar cells

Selected Specific Equipment:

• UHV AFM/STM (Omicron)

• Nanoscope Dimension 3100 (Veeco)

Additional recent selected publications by group members:

• B. Rezek, T. Mates, J. Stuchlík, A. Fejfar, J. Kočka: Influence of Combined AFM/Current Measurements on Local Electronic Properties of Silicon Thin Films J. Non-crystalline Solids 299 - 302 (2002) 360.

• T. Mates, A. Fejfar, I. Drbohlav, B. Rezek, P. Fojtík, K. Luterová, J. Kočka, Ch. Koch, M. B. Schubert, M. Ito, K. Ro, H. Uyama: Role of Grains in Protocrystalline Silicon Layers Grown at Very Low Substrate Temperatures and Studied by Atomic Force Microscopy, J. Non-crystalline Solids 299-302 (2002) 767.

• Rezek B, Stuchlik J, Fejfar A, Kocka J Microcrystalline silicon thin films studied by atomic force microscopy with electrical current detection, J. Appl. Phys. 92 (2002) 587.

• B. Rezek, T. Mates, J. Stuchlík, J. Kočka, A. Stemmer: Charge storage in undoped hydrogenated

amorphous silicon by ambient atomic force microscopy, Applied Physics Letters 83 (2003) 1764.

• P. Fojtík, K. Perronet, I. Pelant, J. Chval, F. Charra: Photon emission from polycrystalline Ag induced by scanning tunneling microscopy: comparison of different tip materials, Surface Science 531 (2003) 113

• Petr Fojtík, Tomáš Mates, Antonín Fejfar, Jan Kočka Ivan Pelant: Experimentální aspekty luminiscence/fotonové emise buzené hrotem STM, Čs. časopis pro fyziku B53 (2003) 113.

• Tomáš Mates, Antonín Fejfar, Ivo Drbohlav, Bohumil Rezek, Petr Fojtík, Kateřina Luterová, Ivan Pelant, Jan Kočka: Studium struktury a růstu nízkoteplotního protokrystalického křemíku pomocí AFM mikroskopu, Čs. časopis pro fyziku B53 (2003) 93.
© 2005